Method of forming a power device and structure therefor
US6809559B2 · kind B2 · utility
0Cited by
5References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 27, 2002 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Oct 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/04123
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of forming a power device (10) includes forming a power transistor (27) and a pull-down transistor (28) on a semiconductor die (36). The pull-down transistor (28) is enabled to rapidly and predictably disable the power transistor (27). The pull-down transistor (28) remains enabled for a first time period during the enabling of the power transistor (27) to facilitate rapidly and predictably enabling the power transistor (27).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.