Structure and process for a pellicle membrane for 157 nanometer lithography
US6811936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Apr 4, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70983
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pellicle membrane structure (800) is made by a process that includes depositing (115) a etch mask layer (110) on the backside of the semiconductor wafer, deposting (120) a first pellicle membrane protection layer (205) on a frontside of the semiconductor wafer, depositing (125) a layer of membrane material (210) that is preferably SiOF on the first membrane protection layer, and depositing (130) a second pellicle membrane protection layer (215) on the membrane material layer, forming a pattern (140) for an opening (410) in the semiconductor, and etching (150) to form the opening. Oxygen plasma (155) is then used to remove carbon from the exposed portions of the pellicle membrane protection layers, which are preferably SiCN, which in the preferable embodiment changes the exposed surfaces to SiOF, thereby forming a thin SiOF membrane (715) over the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.