Partially crosslinked polymer for bilayer photoresist
US6811960B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2003 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Jun 24, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/115
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.