Method of manufacturing ferroelectric capacitor using a sintering assistance film
US6812041B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2003 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Jun 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a ferroelectric capacitor capable of manufacturing a ferroelectric capacitor with lower unevenness on a ferroelectric film surface, and thereby with excellent electric characteristics. By sputtering method, a PZT film is formed on a first conductive film, which constitutes a lower electrode of the ferroelectric capacitor. Thereafter, the PZT film is subjected to crystallization treatment (annealing). Next, a silicate solution is coated on the PZT film as a sintering assistance and then dried. Subsequently, sintering treatment is performed at the temperature of about 700° C. In this way, crystals constituting the PZT film are sintered, unevenness on the surface of PZT film is reduced, and tiny pores in grain boundaries are also reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.