System and method of evaluating gate oxide integrity for semiconductor microchips
US6812050B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 13, 2003 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Jun 13, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N23/06
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a system and method for evaluating gate oxide integrity in a semiconductor wafer. The system may include: a semiconductor wafer; a layer of gate oxide on the semiconductor wafer; a layer of polysilicon on the gate oxide; an electron beam microscope with adjustable energy levels, wherein the electron beam is directed at the semiconductor wafer; an electron beam inspection tool used to detect passive voltage contrasts within the gate oxide layer. The system may also include a measuring tool for measuring an electrical current level of the semiconductor substrate. The system may also include an electrical ground connected to the semiconductor wafer. The system may also include the energy levels vary from about 600 eV to 5000 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.