Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure
US6812051B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 21, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Aug 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal layer is formed directly on a nitride-based compound semiconductor base layer over a substrate body. The metal layer includes at least one metal exhibiting an atomic interaction, with assistance of a heat treatment, to atoms constituting the base layer to promote removal of constitutional atoms from the base layer, whereby pores penetrating the metal layer are formed, while many voids are formed in the nitride-based compound semiconductor base layer. An epitaxial growth of a nitride-based compound semiconductor crystal is made with an initial transient epitaxial growth, which fills the voids, and a subsequent main epitaxial growth over the porous metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.