Semiconductor device manufacturing method
US6812102B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 30, 2003 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Dec 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device using a silicon carbide substrate (1), the object of the present invention is to provide a method of manufacturing a semiconductor device that is a buried channel region type transistor having hot-carrier resistance, high punch-through resistance and high channel mobility. This is achieved by using a method of manufacturing a buried channel type transistor using a P-type silicon carbide substrate that includes a step of forming a buried channel region, a source region and a drain region, a step of forming a gate insulation layer after the step of forming the buried channel region, source region and drain region, and a step of exposing the gate insulation layer to an atmosphere containing water vapor at a temperature of 500° C. or more after the step of forming the gate insulation layer. The gate insulation layer is formed by a thermal oxidation method using dry oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.