Process for achieving intermetallic and/or intrametallic air isolation in an integrated circuit, and integrated circuit obtained
US6812113B1 · kind B1 · utility
6Cited by
21References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1999 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Dec 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The device and process include the deposition of polycrystalline germanium in the interconnect spaces between conductive metal elements. The device and process further include the removal of the germanium in order to form air-filled interconnect spaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.