Adhesion enhancement between CVD dielectric and spin-on low-k silicate films
US6812135B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Oct 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of adhering a silicate layer to dielectric layer comprising the following steps. A structure having an overlying dielectric layer formed thereover is provided. An adhesion promoter layer is formed upon the dielectric layer. The adhesion promoter layer including adhesion promotion molecules. The dielectric layer and the adhesion promoter layer are treated to a low-temperature treatment to bind at least some of the adhesion promotion molecules to the dielectric layer. A silicate layer is formed upon the low-temperature treated adhesion promoter layer. The silicate layer and the low-temperature treated adhesion promoter layer are treated to a high-temperature treatment to bind at least some of the adhesion promotion molecules to the silicate layer whereby the silicate layer is adhered to the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.