GCIB processing to improve interconnection vias and improved interconnection via
US6812147B2 · kind B2 · utility
29Cited by
5References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Dec 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02046
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Reactive gas cluster ion beam processing using gas cluster ions comprising a mixture of gases cleans and/or etches the bottoms of electrical interconnect vias and/or trenches in integrated circuits to produce interconnect structures with lower contact resistances and better reliability than was previously achieved with conventional processes. In one embodiment, an electrical interconnect via structure uses a dielectric or high resistivity diffusion barrier material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.