John Hautala
99Patents
15h-index
78Co-inventors
87Inventor score
Filing activity: Apr 27, 1999 → Jul 21, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6265311A | PECVD of TaN films from tantalum halide precursors | Electricity | 382 | Expired |
| US6410433B1 | Thermal CVD of TaN films from tantalum halide precursors | Electricity | 351 | Expired |
| US7259036B2 | Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products | Electricity | 112 | Expired |
| US6268288A | Plasma treated thermal CVD of TaN films from tantalum halide precursors | Electricity | 70 | Expired |
| US7060989B2 | Method and apparatus for improved processing with a gas-cluster ion beam | Electricity | 56 | Expired |
| US7794798B2 | Method for depositing films using gas cluster ion beam processing | Electricity | 42 | Active |
| US7521089B2 | Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers | Emerging Cross-Sectional Technologies | 41 | Expired |
| US7115511B2 | GCIB processing of integrated circuit interconnect structures | Electricity | 39 | Expired |
| US8237136B2 | Method and system for tilting a substrate during gas cluster ion beam processing | Electricity | 30 | Active |
| US7947582B2 | Material infusion in a trap layer structure using gas cluster ion beam processing | Electricity | 29 | Active |
| US6812147B2 | GCIB processing to improve interconnection vias and improved interconnection via | Electricity | 29 | Expired |
| US8187971B2 | Method to alter silicide properties using GCIB treatment | Electricity | 21 | Active |
| US7968422B2 | Method for forming trench isolation using a gas cluster ion beam growth process | Electricity | 17 | Active |
| US6410432B1 | CVD of integrated Ta and TaNx films from tantalum halide precursors | Chemistry; Metallurgy | 17 | Expired |
| US7410890B2 | Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation | Electricity | 15 | Expired |
| US7825389B2 | Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture | Electricity | 10 | Active |
| US7759251B2 | Dual damascene integration structure and method for forming improved dual damascene integration structure | Electricity | 9 | Expired |
| US7291558B2 | Copper interconnect wiring and method of forming thereof | Electricity | 9 | Expired |
| US9190498B2 | Technique for forming a FinFET device using selective ion implantation | Electricity | 9 | Active |
| US8048788B2 | Method for treating non-planar structures using gas cluster ion beam processing | Electricity | 9 | Active |
| US8372489B2 | Method for directional deposition using a gas cluster ion beam | Electricity | 8 | Active |
| US9984889B2 | Techniques for manipulating patterned features using ions | Electricity | 8 | Active |
| US8313663B2 | Surface profile adjustment using gas cluster ion beam processing | Electricity | 8 | Active |
| US11043394B1 | Techniques and apparatus for selective shaping of mask features using angled beams | Electricity | 8 | Active |
| US8592784B2 | Method for modifying a material layer using gas cluster ion beam processing | Electricity | 8 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.