Thin-film semiconductor element and method of producing same
US6812493B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 4, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Jan 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a thin film semiconductor element which is small in area with high on-current enough to be suitable for the power saving, miniaturization, and high definition display of a device. According to the present invention, an outer shape of a semiconductor thin film is processed and regions (a channel region, a source region, and a drain region) in the semiconductor thin film are formed by using, as masks, other element components such as a gate electrode. Specifically, ion-implanted regions are formed by implanting impurity ions into predetermined regions of the semiconductor thin film using, as a mask, the gate electrode overlapped on the thin film via an insulation film. Thereafter, the semiconductor is processed into a predetermined shape by etching using, as masks, previously formed element components such as the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.