Backside metallization on sides of microelectronic dice for effective thermal contact with heat dissipation devices
US6812548B2 · kind B2 · utility
17Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2001 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Nov 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device and methods of fabricating the same comprising a microelectronic die having an active surface, a back surface, and at least one side. The microelectronic die side comprises a trench sidewall, a lip and a channel sidewall. A metallization layer is disposed on the microelectronic die back surface and the trench sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.