Semiconductor current detector of improved noise immunity
US6812687B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 28, 2000 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Sep 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A current detector has a semiconductor Hall-effect device having a primary semiconductor region where a Hall voltage develops in proportion to the magnitude of the current to be detected. A conductor strip for carrying this current is formed on the semiconductor substrate via a plurality of insulating layers so as to extend around the primary semiconductor region of the Hall-effect device. In order to protect the Hall-effect device from inductive noise, a shielding layer of molybdenum or the like is interposed between the semiconductor substrate and the conductor strip, preferably by being sandwiched between the insulating layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.