Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet
US6813182B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Jun 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A donor/acceptor-organic-junction sheet employed within an electronic memory array of a cross-point diode memory. The donor/acceptor-organic-junction sheet is anistropic with respect to flow of electrical current and is physically unstable above a threshold current. Thus, the volume of the donor/acceptor-organic-junction sheet between a row line and column line at a two-dimensional memory array grid point serves both as the diode component and as the fuse component of a diode-and-fuse memory element and is electrically insulated from similar volumes of the donor/acceptor-organic-junction sheet between neighboring grid point intersections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.