High speed interface type semiconductor memory device
US6813196B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2001 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Nov 22, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4076
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a high speed interface type semiconductor memory device which can transmit data of a plurality of DRAMs of a module to a controller by using only one data strobe clock signal. The high speed interface type semiconductor memory device includes a DRAM module unit for generating a strobe clock signal for synchronizing a data signal in a read operation in a DRAM farthest from a controller among a plurality of DRAMs, providing the strobe clock signal to the other DRAMs, and transmitting data to the controller in the read operation, and a controller for transmitting a clock signal and data signals synchronized with the clock signal to the plurality of DRAMs, and receiving data signals from the DRAMs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.