Asymmetric InGaAsN vertical cavity surface emitting lasers
US6813295B2 · kind B2 · utility
3Cited by
18References
27Claims
0Family size
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Key dates
| Filing date | Mar 25, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Mar 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.