Endpoint detection in substrate fabrication processes
US6813534B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Feb 20, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Aug 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32963
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber. An endpoint signal is issued when the process variable is indicative of an endpoint of the process. A process parameter of the process is also detected, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position. The endpoint signal is determined to be true or false by evaluating the process parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.