Method for evaluating a mask pattern on a substrate
US6813757B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2002 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Dec 14, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/398
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for evaluating a mask pattern for a product that is manufactured by a process that is described at least in part by a mathematical process model includes the steps of: (a) selecting a reference locus; (b) determining a sampling direction from the reference locus; (c) selecting a sampling locus in the sampling direction; (d) evaluating a model factor at the sampling locus; and (e) applying at least one predetermined criterion to the model factor to determine a conclusion. If the conclusion is a first inference, (f) repeating steps (c) through (e). If the conclusion is a second inference, (g) determining whether the evaluation is complete and repeating steps (a) through (g) until the evaluating is complete.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.