Photoresist stripping composition and process for stripping resist
US6815150B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 10, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Dec 10, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides a photoresist stripping composition including (a) an alkanolamine other than those alkanolamines falling under the definition of the below-described component (b); (b) an alkanolamine having in the molecule thereof at least one moiety represented by the following formula (1): (wherein each of R1 and R2 represents hydrogen or a methyl group, and R4 represents a C1-C5 alkyl group); (c) an amide solvent or a sulfoxide solvent; (d) a phosphorus-containing compound; (e) an oxycarboxylic acid; and (f) water. The photoresist stripping composition of the present invention can easily remove photoresist film formed on an inorganic substrate, photoresist residues, and dust or similar matter generated during an etching process in the production of liquid crystal display elements or semiconductor elements, and is highly anticorrosive to various materials such as semiconductor layer materials, conductive materials, and insulating materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.