Method for manufacturing capacitor of semiconductor memory device controlling thermal budget
US6815221B2 · kind B2 · utility
13Cited by
3References
67Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 25, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Oct 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for manufacturing a capacitor of a semiconductor memory device by controlling thermal budgets is provided. In the method for manufacturing a capacitor of a semiconductor memory device, a lower electrode is formed on a semiconductor substrate. The lower electrode is heat-treated with a first thermal budget. A dielectric layer is formed on the heat-treated lower electrode. The dielectric layer is crystallized by heat-treating the dielectric layer with a second thermal budget which is smaller than the first thermal budget.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.