Methods for producing a thermoelectric layer structure and components with a thermoelectric layer structure

US6815244B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Harald Bottner · Glückstadt, DE
• Axel Schubert · Munich, DE
• Joachim Nurnus · Neuenburg am Rhein, DE
• Christa Kunzel · Neuenburg am Rhein, DE

Key dates

• Filing date: Jun 27, 2003
• Grant date: Nov 9, 2004
• Expiry date: Jun 27, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N10/852

Abstract

A method produces a thermoelectric layer structure on a substrate and the thermoelectric layer structure has at least one electrically anisotropically conductive V-VI layer, in particular a (Bi, Sb)2 (Te, Se)3 layer. The V-VI layer is formed by use of a seed layer or by a structure formed in the substrate, and disposed relative to the substrate such that an angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. The orientation can also be effected by an electric field. Components are formed of the thermoelectric layer structure in which the angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. As a result, the known anisotropy of the V-VI materials can advantageously be used for the construction of components.