Thin-film opto-electronic device and a method of making it

US6815247B2 · kind B2 · utility

Assignee

• INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE

Inventors

• Lieven Stalmans · Lommel, BE
• Jef Poortmans · Kessel-Lo, BE
• Matty Caymax · Leuven, BE
• Khalid Said · Leuven, BE
• Johan Nijs · Holsbeek, BE

Key dates

• Filing date: Aug 19, 2003
• Grant date: Nov 9, 2004
• Expiry date: Aug 19, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A thin-film opto-electronic device on a conductive silicon-containing substrate includes a sequence of layers. The layers include a layer of a porous medium preferably a porous silicon, on a substrate. The porous layer has both light diffusing and light reflecting properties. In addition, a non-porous layer is located on said porous silicon layer, with at least one first region and at least one second region being in said non-porous layer. The first region is of a first conductivity type acting as a light absorber and the second region has a conductivity of a second type, different from said first conductivity type. The sequence of layers is such that optical confinement is realised in the device.