Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
US6815296B2 · kind B2 · utility
13Cited by
10References
8Claims
0Family size
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Key dates
| Filing date | Sep 11, 2003 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Sep 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided. The SOI MOSFET device includes a polysilicon back-gate which controls the threshold voltage of a polysilicon-containing front-gate. The back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit/system active periods and during circuit/system idle periods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.