Method of making a bipolar transistor with an oxygen implanted emitter window
US6815302B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2001 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Sep 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/403
Abstract
The present invention provides a method of manufacturing a bipolar transistor. The method may comprise forming a collector in a semiconductor wafer substrate, forming a base in the collector, implanting an oxide region within said collector and over the base, and forming an emitter over the substrate such that the oxide region is located between the emitter and the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.