Silicon carbide bipolar junction transistor with overgrown base region

US6815304B2 · kind B2 · utility

Assignee

• SEMISOUTH LABORATORIES, INC. · US

Inventors

• Igor Sankin · Starkville, US
• Janna B. Dufrene · Starkville, US

Key dates

• Filing date: Feb 22, 2002
• Grant date: Nov 9, 2004
• Expiry date: Mar 11, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/106

Abstract

Silicon carbide bipolar junction transistors having an overgrown base layer are provided. The bipolar junction transistors can be made with a very thin (e.g., 0.3 &mgr;m or less) base layer while still possessing adequate peripheral base resistance values. Self aligning manufacturing techniques for making the silicon carbide bipolar junction transistors are also provided. Using these techniques, the spacing between emitter and base contacts on the device can be reduced. The silicon carbide bipolar junction transistors can also be provided with edge termination structures such as guard rings to increase the blocking capabilities of the device.