Patent · US Expired

Support-integrated donor wafers for repeated thin donor layer separation

US6815309B2 · kind B2 · utility

30Cited by

5References

24Claims

0Family size

Assignee

S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR

Inventors

Fabrice Letertre · Grenoble, FR
Thibaut Maurice · Grenoble, FR

Key dates

Filing date	Dec 23, 2002
Grant date	Nov 9, 2004
Priority date	—
Expiry date	Dec 23, 2022

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/964
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Processes that may be used in producing electronic, opotoelectronic, or optical components may be provided. The processes may involve preparing a reusable donor wafer for donating a thin layer of semiconductor material by assembling a donor layer of a semiconductor material having a thickness of plural thin layers onto a support layer of. The semiconductor material for the support layer may be selected to be less precious or to have a lower quality than the donor layer. The support layer may have sufficient mechanical characteristics for supporting the donor layer during desired semiconductor processing treatments.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.