Patent · US Expired

Method for contacting a semiconductor configuration

US6815351B2 · kind B2 · utility

1Cited by

2References

12Claims

0Family size

Assignee

Siced Electronics Development GmbH & Co. KG · DE

Inventors

Peter Friedrichs · Koblenzer Straße, DE
Dethard Peters · Edenkoben, DE
Reinhold Schorner · Großenseebach, DE

Key dates

Filing date	Mar 7, 2003
Grant date	Nov 9, 2004
Priority date	—
Expiry date	Mar 7, 2023

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/931
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor configuration with an ohmic contact-connection includes a p-conducting semiconductor region made of silicon carbide. A p-type contact region serves for the contact-connection. The p-type contact region is composed of a material containing at least nickel and aluminum. A substantially uniform material composition is present in the entire p-type contact region. A method for contact-connecting p-conducting silicon carbide with a material containing at least nickel and aluminum is also provided. The two components nickel and aluminum are applied simultaneously on the p-conducting semiconductor region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.