Plasma etching apparatus and plasma etching method
US6815365B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2001 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Oct 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.