Beam stop for use in an ion implantation system
US6815696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | May 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/244
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a beam stop for use in an ion implantation system that includes a base formed of a thermally conductive material, and a heat transfer layer formed of a semi-elastic material that is disposed on a surface of the base. The beam stop further includes one or more tiles, each formed of a thermally conductive refractory material, that are disposed on the semi-elastic layer so as to face an ion beam in the implantation system. The heat transfer layer transfers heat generated in the tile in response to ion beam impact to the base. The base in turn can be coupled to a heat sink to remove heat from the base. The thickness and the thermal conductivity of the base, and those of the heat transfer layer and the tile are chosen so as to ensure uniform expansion of the base and the tile when the beam stop is heated by ion beam impact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.