Ambipolar organic transistor

US6815711B2 · kind B2 · utility

Assignees

• INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE
• Agfa-Gevaert NV · BE

Inventors

• Wim Geens · Mechelen, BE
• Jef Poortmans · Kessel-Lo, BE
• Tom Aernouts · Westmeerbeek, BE
• Hieronymus Andriessen · Beerse, BE
• Dirk Vanderzande · Sint-Truiden, BE

Key dates

• Filing date: Oct 23, 2002
• Grant date: Nov 9, 2004
• Expiry date: Oct 23, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/20
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An organic field-effect transistor comprises source and drain electrodes formed separately from each other on a substrate, wherein the substrate comprises at least an organic semiconductor layer constituting a channel between the source and drain electrodes, an insulation layer underlying the organic semiconductor layer, and a gate electrode formed on the opposite side of the isolation layer. The organic semiconductor layer comprises hole and electron transporters, wherein the electron transporters comprise (6,6)-phenyl C61-butyric acid methyl ester (PCBM), and wherein the hole transporters comprise poly(2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylene-vinylene)(OC1C10-PPV) and/or poly(3-hexylthiophene) (P3HT).