Inverted staggered thin film transistor with salicided source/drain structures and method of making same

US6815781B2 · kind B2 · utility

Assignee

• MATRIX SEMICONDUCTOR, INC. · US

Inventors

• Michael A. Vyvoda · Fremont, US
• S. Brad Herner · San Jose, US
• Christopher J. Petti · Mountain View, US
• Andrew J. Walker · Mountain View, US

Key dates

• Filing date: Oct 15, 2002
• Grant date: Nov 9, 2004
• Expiry date: Nov 2, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/00

Abstract

A semiconductor device, such as an inverted staggered thin film transistor, includes a gate electrode, a gate insulating layer located above the gate electrode, an active layer located above the gate insulating layer and an insulating fill layer located above the active layer. A first opening and a second opening are located in the insulating fill layer, a first source or drain electrode is located in the first opening and a second source or drain electrode is located in the second opening. At least one of the first and the second source or drain electrodes comprise a polysilicon layer and a metal silicide layer.