Segmented word line architecture for cross point magnetic random access memory
US6816405B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2003 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | Jun 2, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MRAM comprises a plurality of magnetic memory cells, a plurality of local word lines, each of the local word lines being operatively coupled to at least one memory cell for assisting in writing a logical state of the at least one memory cell corresponding thereto, a plurality of global word lines, each of the plurality of global word lines being connected to at least one of the plurality of local word lines, the global word lines being substantially isolated from the memory cells, a plurality of write circuits operatively coupled to the global word lines, and a plurality bit lines operatively coupled to the memory cells for selectively writing a logical state of one or more of the memory cells. Each of the write circuits is configurable as a current source and/or a current sink for supplying and/or returning, respectively, at least a portion of a write current for assisting in writing one or more memory cells. The write circuits are configured to selectively distribute the write current across at least a plurality of global word lines so that stray magnetic field interaction between selected memory cells and half-selected and/or unselected memory cells is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.