Integrated waveguide gratings by ion implantation
US6816648B2 · kind B2 · utility
10Cited by
39References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 1, 2002 |
| Grant date | Nov 9, 2004 |
| Priority date | — |
| Expiry date | May 2, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12169
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Integrated semiconductor waveguide gratings, methods of manufacture thereof and methods of apodizing thereof are described. A semiconductor waveguide grating includes a substrate, a cladding layer disposed on the substrate, a guide structure that includes a plurality of discrete transverse sections implanted with ions disposed between adjacent transverse sections substantially free of implanted ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.