Method for growing single crystal GaN on silicon
US6818061B2 · kind B2 · utility
31Cited by
3References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2003 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Apr 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing a single crystal GaN film at least 2 microns thick on a Si substrate is disclosed. The method includes growing a prelayer, a buffer layer including AlN on the Si substrate and a plurality of GaN layers and AlN layers deposited alternatively on the top of the AlN buffer layer. By controlling the deposition conditions and timings of the plurality of GaN layers and AlN layers, the single crystal GaN film can be grown thicker than 2 microns without cracks or pits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.