Resist composition
US6818258B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2003 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Aug 7, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/3154
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide a chemical amplification type resist composition which is excellent in transparency to a radiation and in dry etching properties and which gives a resist pattern excellent in sensitivity, resolution, evenness, heat resistance, etc. A resist composition comprising a fluoropolymer (A) which is a fluoropolymer having repeating units formed by cyclopolymerization of a fluorinated diene represented by the formula (1) and which has blocked acidic groups as Q, an acid-generating compound (B) which generates an acid under irradiation with light, and an organic solvent (C):CF2═CR1—Q—CR2═CH2  (1)wherein each of R1 and R2 which are independent of each other, is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group, and Q is a bivalent organic group having a blocked acidic group capable of forming an acidic group by an acid or a group which can be converted to such a blocked acidic group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.