Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
US6818463B2 · kind B2 · utility
9Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Apr 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the supply of crystal growth source material and/or the crystal growth area can be varied over time, thus resulting in a nitride semiconductor device with enhanced properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.