Nitride semiconductor element and production method for nitride semiconductor element
US6818465B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2003 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Apr 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Nitride semiconductor devices and methods of fabricating same are provided. The nitride semiconductor device includes a crystal layer grown into a three-dimensional shape having a side surface portion and an upper layer portion, wherein an electrode layer is formed on the upper layer portion via a high resistance region formed by an undoped gallium nitride layer or the like. Since the high resistance region is provided on the upper layer portion, a current flows so as to bypass the high resistance region of the upper layer portion, to form a current path extending mainly or substantially along the side surface portion while avoiding the upper layer portion, thereby suppressing the flow of a current in the upper layer portion poor in crystallinity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.