Method of forming a field effect transistor having a lateral depletion structure
US6818513B2 · kind B2 · utility
28Cited by
83References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 18, 2003 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Dec 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A method of forming a field effect transistor device includes: forming a well region of a second conductivity type in a semiconductor substrate of a first conductivity type, the semiconductor substrate having a major surface and a drain region; forming a source region of the first conductivity type in the well region; forming a trench gate electrode adjacent to the source region; forming a stripe trench extending from the major surface of the semiconductor substrate into the semiconductor substrate to a predetermined depth; and depositing a semiconductor material of the second conductivity type within the stripe trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.