Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects
US6818533B2 · kind B2 · utility
15Cited by
13References
13Claims
0Family size
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Key dates
| Filing date | May 9, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | May 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Within a plasma enhanced chemical vapor deposition (PECVD) method for forming within a microelectronic fabrication an epitaxial semiconductor layer comprising at least one of silicon and germanium, there is employed a reactant gas composition comprising: (1) at least one of a silicon source material and a germanium source material; and (2) an inert carrier gas. The inert carrier gas provides the epitaxial semiconductor layer with attenuated defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.