Thin phosphorus nitride film as an n-type doping source used in a laser doping technology
US6818535B2 · kind B2 · utility
26Cited by
11References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Jan 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.