Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devices

US6818558B1 · kind B1 · utility

Assignee

• Cypress Semiconductor Corporation · US

Inventors

• Manuj Rathor · Milpitas, US
• Krishnaswamy Ramkumar · San Jose, US
• Fred Jenne · Los Gatos, US
• Loren T. Lancaster · Colorado Springs, US

Key dates

• Filing date: Jun 28, 2002
• Grant date: Nov 16, 2004
• Expiry date: Aug 16, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6893

Abstract

A method of forming a charge storing layer is disclosed. According to an embodiment, a method may include the steps of forming a first portion of a charge storing layer with a first gas flow rate ratio (step 102), forming at least a second portion of the charge storing layer by changing to a second gas flow rate ratio that is different than the first gas flow rate ratio (step 104), and forming at least a third portion of the charge storing layer by changing to a third gas flow rate ratio that is different than the second gas flow rate ratio (step 106).