Thermal activation of fluorine for use in a semiconductor chamber
US6818566B2 · kind B2 · utility
263Cited by
17References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Dec 10, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B7/0035
- WIPO fieldPharmaceuticals
- WIPO sectorChemistry
Abstract
A method and system for thermally activating a oxidizing cleaning gas for use in a semiconductor process chamber cleaning process. The oxidizing cleaning gas is thermally activated by reacting the oxidizing cleaning gas with heated inert gas. The resulting thermally activated oxidizing cleaning gas does not readily deactivate, thus providing enhanced cleaning capabilities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.