Enhanced photo-EMF sensor with high bandwidth and large field of view
US6818880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Sep 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/10
Abstract
A photo-EMF sensor and a method of making same has a substrate with a semiconducting layer; a plurality of sensing regions in the layer, each sensing region including (i) a pair of electrodes disposed in, on or above the layer and (ii) an active region in the layer disposed adjacent said pair of electrodes; and a plurality of inactive regions in said the arranged between adjacent sensing regions. The inactive regions and the sensing regions are dosed with a desensitizing agent, the inactive regions receiving a relatively higher dose of the desensitizing agent and the sensing regions receiving a relatively lower dose of the desensitizing agent. The active layer is preferably placed in a monolithic Fabry-Perot cavity to enhance the optical efficiency and performance of the sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.