Scaled EEPROM cell by metal-insulator-metal (MIM) coupling
US6818936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | May 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A single-poly EEPROM cell is disclosed with a vertically formed metal-insulator-metal (MIM) coupling capacitor, which serves as a control gate in place of a laterally buried control gate thereby eliminating the problem of junction breakdown, and at the same time reducing the size of the cell substantially. A method of forming the single-poly cell is also disclosed. This is accomplished by forming a floating gate over a substrate with an intervening tunnel oxide and then the MIM capacitor over the floating gate with another intervening dielectric layer between the top metal and the lower metal of the capacitor where the latter metal is connected to the polysilicon floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.