Inventor · Hsinchu, TW

Hsin-Ming Chen

90Patents
13h-index
62Co-inventors
87Inventor score

Filing activity: Aug 10, 1999 → Nov 29, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US6576558B1 High aspect ratio shallow trench using silicon implanted oxide Electricity 59 Expired
US9935113B2 Non-volatile memory and method for programming and reading a memory array having the same Emerging Cross-Sectional Technologies 57 Active
US8592886B2 Erasable programmable single-ploy nonvolatile memory Physics 50 Active
US9613714B1 One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method Emerging Cross-Sectional Technologies 43 Active
US7250654B2 Non-volatile memory device Electricity 39 Expired
US7903472B2 Operating method of non-volatile memory Electricity 37 Active
US6787405B2 Method of fabricating liquid crystal display devices integrated with driving circuit Physics 35 Expired
US7172940B1 Method of fabricating an embedded non-volatile memory device Emerging Cross-Sectional Technologies 33 Expired
US7262457B2 Non-volatile memory cell Physics 32 Expired
US7209392B2 Single poly non-volatile memory Electricity 27 Expired
US8941167B2 Erasable programmable single-ploy nonvolatile memory Electricity 16 Active
US6818936B2 Scaled EEPROM cell by metal-insulator-metal (MIM) coupling Electricity 16 Expired
US6812083B2 Fabrication method for non-volatile memory Physics 14 Expired
US6734055B1 Multi-level (4 state/2-bit) stacked gate flash memory cell Electricity 12 Expired
US8344445B2 Non-volatile semiconductor memory cell with dual functions Electricity 11 Active
US9281074B2 One time programmable memory cell capable of reducing leakage current and preventing slow bit response Electricity 11 Active
US6586765B2 Wafer-level antenna effect detection pattern for VLSI Electricity 10 Expired
US6245657A Self-aligned, low contact resistance, via fabrication process Electricity 10 Expired
US6822286B2 Cmos-compatible read only memory and method for fabricating the same Electricity 9 Expired
US10649735B2 Security system with entropy bits Emerging Cross-Sectional Technologies 9 Active
US6372525B1 Wafer-level antenna effect detection pattern for VLSI Electricity 8 Expired
US7660087B2 Electrostatic discharge avoiding circuit Electricity 8 Active
US6407790B1 Method of fabricating a liquid crystal display Physics 8 Expired
US8384155B2 Semiconductor capacitor Physics 8 Active
US7417897B2 Method for reading a single-poly single-transistor non-volatile memory cell Physics 7 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.