Buried gate-field termination structure

US6818947B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Thomas E. Grebs · Smethport, US
• Christopher Boguslaw Kocon · Mountain Top, US
• Rodney S. Ridley · Scarborough, US
• Gary M. Dolny · Smethport, US
• Nathan Kraft · Pottsville, US
• Louise Skurkey · Conyngham, US

Key dates

• Filing date: Sep 19, 2002
• Grant date: Nov 16, 2004
• Expiry date: Sep 19, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

In a power semiconductor device 10, a continuous trench has an outer circumferential portion 58 that includes a field plate and inner portions 28 that carry include one or more gate runners 34 to that the gate runners and the field plate are integral with each other. The trench structure 58, 28 is simpler to form and takes up less surface space that the separate structures of the prior art. The trench is lined with an insulator and further filled with conductive polysilicon and a top insulator.