Lateral high breakdown voltage MOSFET and device provided therewith
US6818954B2 · kind B2 · utility
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25Claims
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Key dates
| Filing date | Dec 3, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Dec 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A film thickness of a gate oxide film of a lateral high breakdown voltage MOSFET of a first conduction type is formed with a thickness in which an electric field value to an absolute maximum rated voltage between a source and a drain becomes equal to or less than 4 MV/cm, and a drain diffused layer is formed so that a total amount of impurities therein becomes equal to or more than 2×1012/cm2 to reduce an on-resistance of the lateral high breakdown voltage MOSFET while ensuing a breakdown voltage thereof, and to reduce an area of the lateral high breakdown voltage MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.