Semiconductor device and process for its manufacture to increase threshold voltage stability
US6818958B2 · kind B2 · utility
6Cited by
14References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 10, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Apr 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The oxide atop a P pad below the gate electrode has a cut completely through the oxide atop the P pad to prevent the drift of contamination ions, such as sodium ions from the periphery of a MOSgated device to the periphery of the active area, thus stabilizing the device threshold voltage under high temperature reverse bias. The cut may be filled with metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.