MEMS devices with voltage driven flexible elements
US6818959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2002 |
| Grant date | Nov 16, 2004 |
| Priority date | — |
| Expiry date | Aug 12, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/0361
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An array of nanometric dimensions consisting of two or more arms, positioned side by side, wherein the arms are of such nanometric dimensions that the beams can be moved or deformed towards or away from one another by means of a low voltage applied between the beams, whereby to produce a desired optical, electronic or mechanical effect. At nanometer scale dimensions structures previously treated as rigid become flexible, and this flexibility can be engineered since it is a direct consequence of material and dimensions. Since the electrostatic force between the two arms is inversely proportional to the square of the distance, a very considerable force will be developed with a low voltage of the order of 1-5 volts, which is sufficient to deflect the elements towards or away from one another. As preferred, the bulk of the element may comprise an insulating material, and an upper conductive layer is applied on the upper surface, where the element is formed by a nanolithography method such as nanoimprint lithography (NIL). Alternatively the elements may be formed completely of conductive material, where the elements are formed by a CMOS metalization process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.